Influence Of Impurity Ni Atoms on The Electrophysical Parameters of Si

Authors

  • N.A.Turgunov Research Institute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, Uzbekistan.
  • E.Kh.Berkinov Research Institute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, Uzbekistan
  • R.M.Turmanova Research Institute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, Uzbekistan
  • N.B.Xaytimmetov Research Institute of Semiconductor Physics and Microelectronics at NUUz, Tashkent, Uzbekistan.
  • L.E.Madaliyev School No.44, Namangan city, Uzbekistan

Keywords:

electrophysical, parameters, obtaining

Abstract

Currently, silicon single crystals doped with impurity atoms of 3d transition metals forming bulk impurity nozzles in silicon are considered widely studied materials in terms of obtaining semiconductor materials with predetermined parameters, as well as control of electrophysical parameters

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Published

2023-06-26

How to Cite

N.A.Turgunov, E.Kh.Berkinov, R.M.Turmanova, N.B.Xaytimmetov, & L.E.Madaliyev. (2023). Influence Of Impurity Ni Atoms on The Electrophysical Parameters of Si. Zeta Repository, 19, 126–130. Retrieved from https://zetarepo.com/index.php/zr/article/view/1844

Issue

Vol. 19 (2023): EJPCM

Section

Articles