INFLUENCE OF IMPURITY Ni AND Cu ATOMS ON THE ELECTROPHYSICAL PROPERTIES OF Si

N. A. Turgunov; E. Kh. Berkinov; R. M. Turmanova

INFLUENCE OF IMPURITY Ni AND Cu ATOMS ON THE ELECTROPHYSICAL PROPERTIES OF Si

Authors

N. A. Turgunov
E. Kh. Berkinov
R. M. Turmanova Scientific Research Institute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent, Uzbekistan

Keywords:

silicon, nickel, copper, impurity, Hall effect.

Abstract

The paper presents the results of studies of the electrophysical properties of Si, doped Ni and Cu samples.

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Published

2023-05-31

How to Cite

N. A. Turgunov, E. Kh. Berkinov, & R. M. Turmanova. (2023). INFLUENCE OF IMPURITY Ni AND Cu ATOMS ON THE ELECTROPHYSICAL PROPERTIES OF Si. Zeta Repository, 4(5), 1203–1208. Retrieved from https://zetarepo.com/index.php/zr/article/view/176